Microstructural study of ferromagnetic Fe-implanted 6H-SiC

被引：8

作者：

Declemy, A. ^{[1
]}

Drouet, M. ^{[1
]}

Eymery, J. P. ^{[1
]}

Dupeyrat, C. ^{[1
]}

Ott, F. ^{[2
]}

Viret, M. ^{[3
]}

机构：

[1] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab,UFA SFA,SP2MI, Teleport 2,Bvd M & P Curie,BP 30179, F-86962 Futuroscope, France

[2] CENS, CEA, UMR 12, CAPMAG,Lab Leon Brillouin, F-91191 Gif Sur Yvette, France

[3] Ctr Etud Saclay, SPEC, CAPMAG, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS VOL 4, NO 4 | 2007年 / 4卷 / 04期

关键词：

D O I：

10.1002/pssc.200674119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Association of multi-energy ion implantation with magnetic and structural analysis methods, particularly X-ray diffraction reciprocal space maps (XRD RSM), is shown to be able to give new original information about the microstructure of Fe-implanted SiC, a good candidate for diluted magnetic semiconductors (DMS) applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：1473 / +

页数：2

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