Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells

被引：47

作者：

Cho, Sung-Bin ^{[1
]}

Hong, Kyoung-Kook ^{[1
]}

Huh, Joo-Youl ^{[1
]}

Park, Hyun Jung ^{[2
]}

Jeong, Ji-Weon ^{[2
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] LG Elect, Solar Cell R&D Grp, Taejon 305380, South Korea

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷

关键词：

Ag thick-film metallization; Oxygen partial pressure; Interfacial reaction; Glass frit; Silicon solar cell; GLASS FRIT;

D O I：

10.1016/j.cap.2009.11.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 degrees C were examined by varying the oxygen partial pressure (Po-2) in the firing ambience The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer Without any oxygen in the firing ambience, no Ag crystallite was formed The Po-2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder. via its influence on the reaction forming the Ag. ions The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells (C) 2009 Elsevier B.V. All rights reserved

引用

页码：S222 / S225

页数：4

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