2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

被引：198

作者：

Huang, Wenjuan ^{[1
]}

Gan, Lin ^{[1
]}

Li, Huiqiao ^{[1
]}

Ma, Ying ^{[1
]}

Zhai, Tianyou ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China

来源：

CRYSTENGCOMM | 2016年 / 18卷 / 22期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; VAPOR-PHASE GROWTH; MOS2 ATOMIC LAYERS; HIGH-PERFORMANCE; SINGLE-LAYER; LARGE-AREA; OPTICAL-PROPERTIES; HIGH-QUALITY; CRYSTAL-STRUCTURE;

D O I：

10.1039/c5ce01986a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The remarkable properties of graphene have inspired great research interest in two-dimensional layered materials (2DLMs) with novel electronic and optical attributes. As a class of graphene-like 2DLMs, ultrathin group IIIA metal chalcogenides (GIIIAMCs, metal = In, Ga; chalcogen = S, Se, Te) have shown great potential in electronics and optoelectronics. In this review, we first introduce the crystal structures and their unique advantages in specific potential applications. Then, we summarize the progress in the fabrication of GIIIAMCs in the framework of top-down and bottom-up methods. Next, their recent achievements regarding enhanced field-effect transistor and photodetector applications are discussed in detail. In addition, the construction strategies of hybrid GIIIAMCs heterostructures and their applications in electronics and optoelectronics are presented. Finally, this review is concluded with some perspectives and an outlook for continued research.

引用

页码：3968 / 3984

页数：17

共 223 条

[21]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[22] Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence [J].

Cui, Yunlong ;

Caudel, David D. ;

Bhattacharya, Pijush ;

Burger, Arnold ;

Mandal, Krishna C. ;

Johnstone, D. ;

Payne, S. A. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)

[23] High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].

Das, Saptarshi ;

Chen, Hong-Yan ;

Penumatcha, Ashish Verma ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (01) :100-105

[24] Growth and characterization of a novel In2Se3 structure [J].

de Groot, CH ;

Moodera, JS .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) :4336-4340

[25] Graphene based heterostructures [J].

Dean, C. ;

Young, A. F. ;

Wang, L. ;

Meric, I. ;

Lee, G. -H. ;

Watanabe, K. ;

Taniguchi, T. ;

Shepard, K. ;

Kim, P. ;

Hone, J. .

SOLID STATE COMMUNICATIONS, 2012, 152 (15) :1275-1282

[26] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].

Dean, C. R. ;

Wang, L. ;

Maher, P. ;

Forsythe, C. ;

Ghahari, F. ;

Gao, Y. ;

Katoch, J. ;

Ishigami, M. ;

Moon, P. ;

Koshino, M. ;

Taniguchi, T. ;

Watanabe, K. ;

Shepard, K. L. ;

Hone, J. ;

Kim, P. .

NATURE, 2013, 497 (7451) :598-602

[27] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[28] PREPARATION AND CHARACTERIZATION OF IN2SE3 CRYSTALS [J].

DEBLASI, C ;

DRIGO, AV ;

MICOCCI, G ;

TEPORE, A ;

MANCINI, AM .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :455-458

[29] Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode [J].

Deng, Yexin ;

Luo, Zhe ;

Conrad, Nathan J. ;

Liu, Han ;

Gong, Yongji ;

Najmaei, Sina ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Xu, Xianfan ;

Ye, Peide D. .

ACS NANO, 2014, 8 (08) :8292-8299

[30]

Duan XD, 2014, NAT NANOTECHNOL, V9, P1024, DOI [10.1038/NNANO.2014.222, 10.1038/nnano.2014.222]

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