Graphene saturable absorber for diode pumped Yb:Sc2SiO5 mode-locked laser

被引：56

作者：

Cai, Wei ^{[1
]}

Jiang, Shouzhen ^{[1
]}

Xu, Shicai ^{[1
]}

Li, Yaqi ^{[1
]}

Liu, Jie ^{[1
]}

Li, Chun ^{[1
]}

Zheng, Lihe ^{[2
]}

Su, Liangbi ^{[2
]}

Xu, Jun ^{[2
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Shandong Prov Key Lab Opt & Photon Device, Jinan 250014, Peoples R China

[2] Chinese Acad Sci, Inst Ceram, Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 201800, Peoples R China

来源：

OPTICS AND LASER TECHNOLOGY | 2015年 / 65卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Passively mode-locked laser; Yb:Sc2SiO5 crystal; MONOLAYER GRAPHENE; LAYER GRAPHENE; LARGE-AREA; PERFORMANCE; LOCKING; CRYSTAL; FIBER;

D O I：

10.1016/j.optlastec.2014.06.010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-quality monolayer graphene was successfully fabricated by chemical vapor deposition technology. By using the graphene as a saturable absorber, the Yb:Sc2SiO5 crystal passively mode-locked laser was demonstrated for the first time. Stable mode-locked laser pulses were obtained with a repetition rate of 90.7 MHz and an average output power of 480 mW at the center wavelength of 1062.8 nm. The maximum single pulse energy and the maximum peak power were 5.3 nJ and 378 W, respectively. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1 / 4

页数：4

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