Characterization of luminescent properties of ZnO:Er thin films prepared by rf magnetron sputtering

被引:16
作者
Song, Hyundon [1 ]
Kim, Young Jin [1 ]
机构
[1] Kyonggi Univ, Dept Mat Sci & Engn, Suwon 443760, South Korea
关键词
optical properties; ZnO; films; infrared;
D O I
10.1016/j.jeurceramsoc.2007.02.028
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO;Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering and annealed at 700 degrees C under air and H, atmospheres for the luminescent improvement. The effects of sputtering parameters and the annealing conditions on visible and 1.54 mu m IR emissions were investigated. Structural and luminescent properties strongly depended on the deposition conditions and annealing atmospheres. By tuning the excitation wavelength. ZnO:Er thin films exhibited a strong emission band at around 465 nm and a weak emission at 525 nm originated from the energy transition of I-4(15/2)-F-4(15/2) and I-4(15/2)-H-2(11/2), respectively, while 1.54 mu m IR emissions due to I-4(15/2)-I-4(13/2) transition. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3745 / 3748
页数:4
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