Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

被引：25
作者：
Lee, Sunghwan [1 ]
Song, Yang [2 ]
Park, Hongsik [4 ]
Zaslavsky, A. [2 ,3 ]
Paine, D. C. [3 ]
机构：
[1] Baylor Univ, Dept Mech Engn, Waco, TX 76798 USA
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Brown Univ, Sch Engn, Providence, RI 02912 USA
[4] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea
来源：
SOLID-STATE ELECTRONICS | 2017年 / 135卷
基金：
美国国家科学基金会;
关键词：
Amorphous oxides; InZnO (IZO); Thin film transistor (TFT); Channel scaling; Field-effect mobility; ZN-O; OXIDE;
D O I：
10.1016/j.sse.2017.06.033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility mu(FE) with channel length L (from 39.3 to 9.9 cm(2)/V.s as L is reduced from 50 to 5 mu m). Transmission line model measurements reveal that channel scaling leads to a significant mu(FE) underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct lFE when the TFT performance is significantly affected by R-C. The corrected mu(FE) values are higher (45.4 cm(2)/V.s) and nearly independent of L. The results show the critical effect of contact resistance on mu(FE) measurements and suggest strategies to determine accurate mu(FE) when a TFT channel is scaled. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：94 / 99
页数：6
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