A 3.3-mW LOW PHASE NOISE VCDL FOR FACTORIAL DELAY-LOCKED LOOPS

被引:0
|
作者
Mohamed, Abdallah K. [1 ]
Ibrahim, Sameh A. [2 ]
Abo-Elsoud, Mohy Eldin A. [1 ]
机构
[1] Mansoura Univ, Elect & Commun Engn Dept, Mansoura, Egypt
[2] Ain Shams Univ, Elect & Commun Engn Dept, Cairo, Egypt
来源
PROCEEDINGS OF 2019 36TH NATIONAL RADIO SCIENCE CONFERENCE (NRSC) | 2019年
关键词
RF transceivers; GSM; factorial DLL; voltage-controlled delay line;
D O I
10.1109/nrsc.2019.8734687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A voltage-controlled delay line (VCDL) circuit to be used in factorial delay-locked loops (DLLs) that meets the requirements of the radio frequency (RF) communication standards in the band of 0.9-4 GHz is presented. The proposed circuit utilizes a differential ring oscillator with sub-feedback loops to obtain multi-phase outputs. A differential current-starved delay cell with symmetrical load is used. The circuit offers two quadrature phase outputs. The proposed VCDL achieves a very low phase noise of -143 dBc/Hz with a figure of merit of -208 dBc/Hz meeting the phase noise requirements of the GSM standard; the most severe standard in terms of phase noise requirements in the targeted band. The circuit consumes a 3.3-mW from a 1.2-V supply implemented in 130-nm CMOS technology and occupies an area of 66x40 mu m2.
引用
收藏
页码:299 / 304
页数:6
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