First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

被引：1

作者：

Courtot-Descharles, A ^{[1
]}

Paillet, P ^{[1
]}

Leray, JL ^{[1
]}

Musseau, O ^{[1
]}

机构：

[1] CEA, DAM Ile France, Serv Equipment Instrumentat Metrol, F-91680 Bruyeres Le Chatel, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2000年 / 3卷 / 1-2期

关键词：

ab-initio calculations; hydrogen anneal; Si/SiO2; interface; non volatile memory; oxide layer;

D O I：

10.1016/S1369-8001(00)00016-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent works have shown that when performed in the 450-600 degrees C temperature range, hydrogen anneal can generate mobile positive charges in the oxide of Si/SiO2/Si structures, identified as protons. During their transport by the applied electric field, these protons are blocked at either the top or the bottom interface. This phenomenon has been used to propose a new concept of non volatile memory device. The physical mechanisms responsible for the creation, transport and blocking of the mobile protons in Si/SiO2/Si structures are still unclear. This work presents an investigation of proton creation and blocking by atomic scale simulation using an ab-initio approach. An interfacial reactive site has been found, which could be involved in the creation and blocking steps, (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：143 / 148

页数：6

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