Improving single-mode VCSEL performance by introducing a long monolithic cavity

被引：94

作者：

Unold, HJ ^{[1
]}

Mahmoud, SWZ ^{[1
]}

Jäger, R ^{[1
]}

Kicherer, M ^{[1
]}

Riedl, MC ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] Univ Ulm, Optoelect Dept, D-89081 Ulm, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期

关键词：

distributed Bragg reflector lasers; laser modes; laser resonators; semiconductor lasers;

D O I：

10.1109/68.867967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the improvement of several selectively oxidized vertical-cavity surface emitting laser characteristics by introducing a long monolithic cavity. The samples compared are grown with various cavity lengths using solid-source MBE. The 980 nm-regime is chosen as emission wavelength to facilitate growth by using binary GaAs cavity spacers. A record high single-transverse mode output power of 5 mW at a series resistance of 98 Ohm is obtained for a 7-mu m aperture device with a 4-mu m cavity spacer. Using an 8-mu m cavity spacer, devices up to 16-mu m aperture diameter emit 1.7 mW of single-mode power with a full-width at half-maximum far-field angle below 3.8 degrees.

引用

页码：939 / 941

页数：3

共 8 条

[1] CAVITY CHARACTERISTICS OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].