Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging

被引：39

作者：

Hoglund, L. ^{[1
]}

Asplund, C. ^{[1
]}

von Wurtemberg, R. Marcks ^{[1
]}

Kataria, H. ^{[1
]}

Gamfeldt, A. ^{[1
]}

Smuk, S. ^{[1
]}

Martijn, H. ^{[1
]}

Costard, E. ^{[1
]}

机构：

[1] IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden

来源：

INFRARED PHYSICS & TECHNOLOGY | 2017年 / 84卷

关键词：

Indium antimonides - Gallium compounds - Antimony compounds - Indium arsenide - Thermography (imaging);

D O I：

10.1016/j.infrared.2017.03.002

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Type-Il InAs/GaSb superlattice detectors and focal plane arrays (FPAs) with cut-off wavelength at 5.1 mu.m have been studied. For single pixel devices, dark current densities of 1 x 10(-6) A/cm(2) and quantum efficiencies of 53% were measured at 120 K. From statistics of manufactured FPAs, an average FPA operability of 99.87% was observed. Furthermore, average temporal and spatial noise equivalent temperature difference (NETD) values of 12 mK and 4 mK, respectively, were deduced. Excellent stability of FPAs after non uniformity correction was observed with no deterioration of the ratio between spatial and temporal noise during a two hour long measurement. Also after several cooldowns the ratio between spatial and temporal NETD stayed below 0.6. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：28 / 32

页数：5

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