Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme

被引：54

作者：

Chandrasekaran, Sridhar ^{[1
]}

Simanjuntak, Firman Mangasa ^{[2
]}

Panda, Debashis ^{[3
]}

Tseng, Tseung-Yuen ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn & Comp Sci, Hsinchu 30010, Taiwan

[2] Tohoku Univ, Adv Inst Mat Res, WPI, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Sci & Technol, Elect Engn & Phys Dept, Berhampur 761008, India

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 11期

关键词：

Switches; Synapses; Neurons; Memristors; Linearity; Indium tin oxide; Brain-inspired computing; neural networks; resistive synapse; synapse; LONG-TERM POTENTIATION; MEMORY;

D O I：

10.1109/TED.2019.2941764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88 %) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.

引用

页码：4722 / 4726

页数：5

共 26 条

[1]

Amit D. J., 1989, MODELING BRAIN FUNCT, DOI DOI 10.1017/CBO9780511623257

[2] Complementary Switching in 3D Resistive Memory Array [J].

Banerjee, Writam ;

Xu, Xiaoxin ;

Lv, Hangbing ;

Liu, Qi ;

Long, Shibing ;

Liu, Ming .

ADVANCED ELECTRONIC MATERIALS, 2017, 3 (12)

[3] Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices [J].

Banerjee, Writam ;

Liu, Qi ;

Lv, Hangbing ;

Long, Shibing ;

Liu, Ming .

NANOSCALE, 2017, 9 (38) :14442-14450

[4] Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory [J].

Banerjee, Writam ;

Liu, Qi ;

Long, Shibing ;

Lv, Hangbing ;

Liu, Ming .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (30)

[5] Long-term potentiation and long-term depression: a clinical perspective [J].

Bliss, Timothy V. P. ;

Cooke, Sam F. .

CLINICS, 2011, 66 :3-17

[6] Improving linearity by introducing Al in HfO2 as a memristor synapse device [J].

Chandrasekaran, Sridhar ;

Simanjuntak, Firman Mangasa ;

Saminathan, R. ;

Panda, Debashis ;

Tseng, Tseung-Yuen .

NANOTECHNOLOGY, 2019, 30 (44)

[7] Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory [J].

Chandrasekaran, Sridhar ;

Simanjuntak, Firman Mangasa ;

Tsai, Tsung-Ling ;

Lin, Chun-An ;

Tseng, Tseung-Yuen .

APPLIED PHYSICS LETTERS, 2017, 111 (11)

[8] Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films [J].

Hu, Lingxiang ;

Fu, Sheng ;

Chen, Youhu ;

Cao, Hongtao ;

Liang, Lingyan ;

Zhang, Hongliang ;

Gao, Junhua ;

Wang, Jingrui ;

Zhuge, Fei .

ADVANCED MATERIALS, 2017, 29 (24)

[9] Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks [J].

Ielmini, Daniele .

MICROELECTRONIC ENGINEERING, 2018, 190 :44-53

[10] Device and materials requirements for neuromorphic computing [J].

Islam, Raisul ;

Li, Haitong ;

Chen, Pai-Yu ;

Wan, Weier ;

Chen, Hong-Yu ;

Gao, Bin ;

Wu, Huaqiang ;

Yu, Shimeng ;

Saraswat, Krishna ;

Wong, H-S Philip .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (11)

← 1 2 3 →