Self-powered photodetector functionalized by SnS quantum dots

被引：27

作者：

Modi, Krishna H. ^{[1
]}

Pataniya, Pratik M. ^{[1
]}

Patel, Vikas ^{[2
]}

Sumesh, C. K. ^{[1
]}

机构：

[1] Univ Sci & Technol, PD Patel Inst Appl Sci, Dept Phys Sci, CHARUSAT, Changa 388421, Gujarat, India

[2] SICART, Anand 388120, Gujarat, India

来源：

OPTICAL MATERIALS | 2022年 / 129卷

关键词：

SnS quantum Dots; Hydrothermal; Liquid phase exfoliation; Self-powered; Broad band photodetection; THIN-FILMS; GRAPHENE; DEPOSITION;

D O I：

10.1016/j.optmat.2022.112504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-powered photodetectors based on layered semiconductors have captivated huge attention owing to low-powered consumption and fast photo-switching. Herein, we report two step facile synthesis of SnS quantum dots by hydrothermal growth and liquid phase exfoliation technique. Grown SnS quantum dots have ortho-rhombic crystal structure with (040) preferred orientation. Subsequently, ITO/SnS/ITO photodetector is fabri-cated and exploited for photo-switching in spectral range from 390 to 780 nm. Photodetector has exhibited excellent self-powered photoresponse with fast detection ability with response time as small as 80 ms. Photo-responsivity and specific detectivity of 2.04 mA/W and 0.85 x 10(9) Jones are achieved for self-powered pho-todetection, respectively. Finally, present research advocates the enormous progress in the field of self-powered opto-electronics.

引用

页数：5

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