Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature

被引：132

作者：

Bredemeier, Dennis ^{[1
]}

Walter, Dominic ^{[1
]}

Herlufsen, Sandra ^{[1
]}

Schmidt, Jan ^{[1
,2
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, Ohrberg 1, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Inst Solid State Phys, Dept Solar Energy, Appelstr 2, D-30167 Hannover, Germany

来源：

AIP ADVANCES | 2016年 / 6卷 / 03期

关键词：

CRYSTALLINE SILICON; SOLAR-CELLS; DISSOCIATION;

D O I：

10.1063/1.4944839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We examine the carrier lifetime evolution of block-cast multicrystalline silicon (mc-Si) wafers under illumination (100 mW/cm(2)) at elevated temperature (75 degrees C). Samples are treated with different process steps typically applied in industrial solar cell production. We observe a pronounced degradation in lifetime after rapid thermal annealing (RTA) at 900 degrees C. However, we detect only a weak lifetime instability in mc-Si wafers which are RTA-treated at 650 degrees C. After completion of the degradation, the lifetime is observed to recover and finally reaches carrier life-times comparable to the initial state. To explain the observed lifetime evolution, we suggest a defect model, where metal precipitates in the mc-Si bulk dissolve during the RTA treatment. (C) 2016 Author(s).

引用

页数：8

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