Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

被引：8
作者：
Cheng, YC [1 ]
Yang, ST
Yang, JN
Lan, WH
Chang, LB
Hsieh, LZ
机构：
[1] Ming Hsin Univ Sci & Technol, Dept Elect Engn, Hsinchu 304, Taiwan
[2] Cheng Shun Inst Sci & Technol, Mat Res & Dev Ctr, Taoyuan 325, Taiwan
[3] Chung Cheng Inst Technol, Dept Elect Engn, Taoyuan 325, Taiwan
来源：
OPTICAL ENGINEERING | 2003年 / 42卷 / 01期
关键词：
photodetector; InAs/GaAs; quantum dots; superlattice; FTIR;
D O I：
10.1117/1.1525277
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 mum, with a peak absorption wavelength near 13.2 mum (756 cm(-1)). The electrical characteristic of the device's current-voltage response is 63 muA at -1-V bias voltage when a 1-cd light source is at 15-cm distance. (C) 2003 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码：119 / 123
页数：5
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