Effect Analysis of Application of Energy Band Gap to Electrostatic Discharge Protection

被引：0

作者：

Hsieh, Hong-Yin ^{[1
]}

Ruan, Jheng-Yuan ^{[1
]}

Guo, Min-Jun ^{[1
]}

Wang, Wei-Chiao ^{[1
]}

Guan, Sheng-Wei ^{[1
]}

Wu, Sung-Mao ^{[1
]}

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019) | 2019年

关键词：

Electrostatic Discharge; System-level circuit; Energy Band Gap;

D O I：

10.23919/icep.2019.8733475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the advancement of technology and the electronics is getting smaller and smaller, the probability of being affected by electrostatic discharge (ESD) has also increased. The failure and destruction of electronic products caused by high voltage input, which was because of being touched by human or the machine during the processes of production or transportation, make lifetime of products decrease greatly and cost of production increase. Consequently, the design of electrostatic discharge protection circuit for system-level circuit is getting more and more important. The main purpose of this paper is to analyze the effect of the application of energy band gap (EBG) to electrostatic discharge protection.

引用

页码：345 / 348

页数：4

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