Synthesis of Highly Luminescent InP/ZnS Quantum Dots with Suppressed Thermal Quenching

被引:5
作者
Lian, Linyuan [1 ]
Li, Youyou [1 ]
Zhang, Daoli [1 ]
Zhang, Jianbing [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Shenzhen Huazhong Univ Sci & Technol Res Inst, Shenzhen 518057, Peoples R China
关键词
InP; quantum dots; core; shell; ZnS; thermal quenching; CORE/SHELL NANOCRYSTALS; INP NANOCRYSTALS; COLLOIDAL INP; EFFICIENT;
D O I
10.3390/coatings11050581
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
InP quantum dots (QDs) are promising down-conversion phosphors for white light LEDs. However, the mainstream InP QDs synthesis uses expensive phosphorus source. Here, economic, in situ-generated PH3 is used to synthesize InP QDs and a two-step coating of ZnS shells is developed to prepare highly luminescent InP/ZnS/ZnS QDs. The QDs show a photoluminescence quantum yield as high as 78.5%. The emission can be tuned by adjusting the halide precursor and yellow emissive InP/ZnS/ZnS QDs are prepared by judiciously controlling the synthetic conditions. The yellow QDs show suppressed thermal quenching and retain >90% room temperature PL intensity at 150 degrees C for the growth solution. Additionally, the PL spectrum matches with the eye sensitivity function, resulting in efficient InP QD white light LEDs.
引用
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页数:8
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