A photoluminescence study of MBE-grown CuInSe2 film with a near-stoichiometric composition

被引：0

作者：

Yang, DJ ^{[1
]}

Tseng, BH ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

来源：

TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of CuInSe2 were grown on (001) GaAs by the molecular beam epitaxy technique without substrate rotation. A sample having a composition map covering both the Cu-rich and In-rich region was used for the photoluminescence (PL) study. We demonstrate that the PL property is consistently varied from the In-rich side to the Cu-rich side. An exciton peak was observed when the film composition was close to the stoichiometry.

引用

页码：305 / 308

页数：4

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