A photoluminescence study of MBE-grown CuInSe2 film with a near-stoichiometric composition

被引：0
|
作者：
Yang, DJ [1 ]
Tseng, BH [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thin films of CuInSe2 were grown on (001) GaAs by the molecular beam epitaxy technique without substrate rotation. A sample having a composition map covering both the Cu-rich and In-rich region was used for the photoluminescence (PL) study. We demonstrate that the PL property is consistently varied from the In-rich side to the Cu-rich side. An exciton peak was observed when the film composition was close to the stoichiometry.
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页码：305 / 308
页数：4
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