In Situ Analysis of the Growth and Dielectric Properties of Organic Self-Assembled Monolayers: A Way To Tailor Organic Layers for Electronic Applications

被引:11
作者
Markov, Aleksandr [1 ]
Greben, Kyrylo [1 ]
Mayer, Dirk [1 ]
Offenhaeusser, Andreas [1 ]
Woerdenweber, Roger [1 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI8, D-52425 Julich, Germany
关键词
self-assembled monolayer; APTES; molecular layer deposition; in situ characterization; permittivity; NANOPARTICLES; SILANE; IMMOBILIZATION; SILANIZATION; ADSORPTION; DEPOSITION; PARTICLES; ADHESION;
D O I
10.1021/acsami.6b04021
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic nanoscale science and technology relies on the control of phenomena occurring at the molecular level. This is of particular importance for the self-assembly of molecular monolayers (SAM) that can be used in various applications ranging from organic electronics to bioelectronic applications. However, the understanding of the elementary nanoscopic processes in molecular film growth is still in its infancy. Here, we developed a novel in situ and extremely sensitive detection method for the analysis of the electronic properties of molecular layer during molecular layer deposition. This low-frequency sensor (1 kHz) is employed to analyze the standard vapor deposition process of SAMs of molecules and, subsequently, it is used to optimize the growth process itself. By combining this method with an ex situ determination of the effective thickness of the resulting layers via ellipsometry, we observe a large difference of the permittivity (1 kHz) of the examined aminosilanes in the liquid state (epsilon(liquid) = 5.5-8.8) and in SAMs (epsilon(SAM) = 22-52, electric field in the plane of the layer). We ascribe this difference to either the different orientation and order of the molecules, the different density of molecules, or a combination of both effects. Our novel in situ analyses not only allows monitoring and optimizing the deposition of organic layers but also demonstrates the high potential of organic SAMs as organic high-k layers in electronic devices.
引用
收藏
页码:16451 / 16456
页数:6
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