Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire

被引：7

作者：

Asif, Fatima ^{[1
]}

Chen, Hung-Chi ^{[1
]}

Coleman, Antwon ^{[1
]}

Ahmad, Iftikhar ^{[2
]}

Zhang, Bin ^{[2
]}

Dion, Joe ^{[2
]}

Heidari, Ahmad ^{[2
]}

Adivarahan, Vinod ^{[2
]}

Khan, Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Nitek Inc, Columbia, SC 29201 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期

关键词：

AlGaN MQW; deep ultraviolet; light-emitting diode; MOCVD; pseudomorphic growth;

D O I：

10.1002/pssc.201300682

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the fabrication of AlGaN-based pseudomorphic light-emitting diodes over sapphire substrate with peak emission at 275 nm. A 0.6 mu m thick n-AlGaN contact layer was grown using a novel pulsed silicon modulation doping technique, which enabled us to achieve a sheet resistance of similar to 500 Omega/square In order to miti-gate current crowding and Joule heating issues, we implemented the pixel-LED design with a total p-active area of 360 mu m x 360 mu m. Packaged devices exhibited light output powers of similar to 7 mW at 100 mA dc pump current. The forward voltage was similar to 8.8 V. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：798 / 801

页数：4

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