A boron doped amorphous silicon thin-film bolometer for long wavelength detection

被引：0

作者：

Heredia, A ^{[1
]}

Torres, A ^{[1
]}

Jaramillo, A ^{[1
]}

De la Hidalga, FJ ^{[1
]}

Landa, M ^{[1
]}

机构：

[1] INAOE, Dept Opt, Puebla 72840, Mexico

来源：

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of a bolometer for infrared detection using a boron doped amorphous silicon (a-Si-B:H) thin film is presented for the first time. This thin film (170 nm) was deposited on a silicon nitride membrane sustained by a frame made of micromachined crystalline silicon in order to improve the thermal isolation. Electrical connectivity to the element was achieved by means of aluminum contact pads. The resultant figures of merit, measured at room temperature, were: electrical conductivity of 1.513X10(-3) (Omega-cm)(-1), thermal coefficient of resistance of 3.4 % K-1 and the device is sensitive to temperature variations as small as 20 mK.

引用

页码：265 / 270

页数：6

共 6 条

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