Relationship between the isoelectric point (pHpzc) and the potential of zero charge (Epzc) for passive metals

被引：85

作者：

McCafferty, E. ^{[1
]}

机构：

[1] USN, Res Lab, Sci Applicat Int Corp, Washington, DC 20375 USA

来源：

ELECTROCHIMICA ACTA | 2010年 / 55卷 / 05期

关键词：

Passivity; Oxide films; Isoelectric point; Potential of zero charge; Flatband potential; ACID-BASE PROPERTIES; ANODIC OXIDE-FILMS; SEMICONDUCTING PROPERTIES; PHOTOELECTROCHEMICAL ANALYSIS; IMPEDANCE SPECTROSCOPY; ELECTRONIC-PROPERTIES; AQUEOUS-SOLUTIONS; SURFACE-CHARGE; PH-DEPENDENCE; CU2O LAYERS;

D O I：

10.1016/j.electacta.2009.10.040

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The potential of zero charge of oxide-covered metals (E-pzc) is shown to be linear function of the isoelectric point of the oxide film (pH(pz)c). The linearity is displayed for 14 different metals having n-type semiconductor oxide films and for three metals having p-type semiconductor oxide films. Using experimental values from the literature, the slope of the linear plot of E-pzc vs. pH(pzc) is observed to be -0.142 V for n-type oxides and -0.115 V for p-type oxides. The theoretical slope is -0.120 V. which is derived in this communication. (C) 2009 Published by Elsevier Ltd.

引用

页码：1630 / 1637

页数：8

共 20 条

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