Switching speed limitations of high power IGBT modules

被引：0
|
作者：
Incau, Bogdan Ioan [1 ]
Trintis, Ionut [1 ]
Munk-Nielsen, Stig [1 ]
机构：
[1] Aalborg Univ, Dept Energy Technol, Pontoppidanstraede 101, DK-9220 Aalborg, Denmark
来源：
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE) | 2015年
关键词：
High power discrete device; IGBT; Power semiconductor device; Reverse recovery; Switching losses;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.
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页数：8
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