Thinning of surface cones by the focused ion beam technique

被引:5
作者
Imai, A [1 ]
Kamiya, C [1 ]
Fujimoto, Y [1 ]
Okuyama, F [1 ]
机构
[1] Nagoya Inst Technol, Grad Sch Engn, Dept Environm Technol, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
electron microscopy; ion-solid interactions; ion etching; semiconductor surfaces; silicon; single crystal surfaces; sputtering; surface roughening;
D O I
10.1016/S0039-6028(00)00507-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The focused ion beam (FIB) technique makes it possible to thin the 'cones' grown on ion-bombarded solid surfaces without modifying their structure. Cross-sectional transmission electron microscopy (X-TEM) of samples prepared by this technique can provide unambiguous information on the structure of the cones, as well as their growth behavior. A new phenomenon uncovered with our FIB technique is that the simultaneous supply of molybdenum seeds on an Si surface bombarded with 3 keV Ar+ dramatically enhances the amorphization of the near-surface area at around 500 degrees C, presumably through a catalytic process. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L515 / L520
页数:6
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