Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates

被引：3
|
作者：
Onodera, Chikara [1 ]
Yoshida, Masaaki [2 ]
Taguchi, Tsunemasa [3 ]
机构：
[1] Aomori Prefectural Towada Tech Senior High Sch, Elect Engn Course, 215-1 Shimotai Sanbongi, Aomori 0340001, Japan
[2] Hachinohe Natl Coll Technol, Dept Elect & Comp Engn, Aomori 0391192, Japan
[3] Yamaguchi Univ, Dept Elect & Elect Engn, Yamaguchi 7558611, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 02期
关键词：
EPITAXIAL-GROWTH; PHOTOLUMINESCENCE; DEFECTS; INSB; GAAS;
D O I：
10.1143/JJAP.49.021201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We performed photoluminescence (PL) and reflectance characterization of CdTe films on GaAs substrates. Separate emission peaks for heavy- and light-hole free excitons due to induced compressive strain were observed. The strain in a CdTe film is estimated to be epsilon = -5.28 x 10(-4). By analyzing the PL and reflectance spectra, both heavy-and light-hole free exciton binding energies are estimated to be 9.9 meV. By analyzing the energy separation between the heavy-and light-hole free exciton reflectance dips, the magnitude of the residual compressive strain is determined to be homogeneously distributed within a CdTe film. From the CdTe film thickness dependence of heavy-and light-hole free exciton linewidths, the CdTe film quality is observed to become poor with decreasing CdTe film thickness. (C) 2010 The Japan Society of Applied Physics
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页数：4
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