Defect Annihilation in the Directed Self-Assembly of Block Copolymers in Films with Increasing Thickness

被引:13
|
作者
Chen, Xuanxuan [1 ,2 ]
Delgadillo, Paulina R. [2 ,3 ]
Jiang, Zhang [4 ]
Craig, Gordon S. W. [2 ]
Gronheid, Roel [3 ]
Nealey, Paul F. [2 ,5 ]
机构
[1] Intel Corp, 2501 NE Century Blvd, Hillsboro, OR 97124 USA
[2] Univ Chicago, Inst Mol Engn, 5640 S Ellis Ave, Chicago, IL 60637 USA
[3] Imec, Kapeldreef 75, B-3001 Leuven, Belgium
[4] Argonne Natl Lab, Xray Sci Div, 9700 South Cass Ave, Argonne, IL 60439 USA
[5] Argonne Natl Lab, Mat Sci Div, 9700 South Cass Ave, Lemont, IL 60439 USA
基金
美国国家科学基金会;
关键词
X-RAY-SCATTERING; CHEMICAL-PATTERNS; DENSITY MULTIPLICATION; ORIENTATIONAL ORDER; THIN; LITHOGRAPHY; FABRICATION; ALIGNMENT; DOMAINS; ENERGY;
D O I
10.1021/acs.macromol.9b01030
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We investigate directed self-assembly (DSA), with 3x density multiplication, of symmetric polystyrene-block-poly(methyl methacrylate) (L-0 = 28 nm) with increasing film thicknesses and reveal a thickness limit above which the defect annihilation mechanism is different than in thinner films. Block copolymer films of increasing thickness underwent DSA on a macroscopic chemical pattern under optimum geometrical and chemical conditions. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering (GISAXS) were used to characterize the long-range ordering and buried structures as a function of film thickness and thermal annealing time. Rotational GISAXS measurements revealed a critical thickness of similar to 3L(0,) below which defect annihilation is cooperative across the film depth and above which it is faster at the free surface than in the film's interior. In the latter case, defects can persist in the film's interior despite perfect assembly and registration at the free surface of the film.
引用
收藏
页码:7798 / 7805
页数:8
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