Carbon incorporation in chemical vapor deposited aluminum oxide films

被引：9

作者：

Schmidt, Benjamin W. ^{[1
]}

Rogers, Bridget R. ^{[1
]}

Gren, Cameron K. ^{[2
]}

Hanusa, Timothy P. ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Chem & Biomol Engn, Nashville, TN 37203 USA

[2] Vanderbilt Univ, Dept Chem, Nashville, TN USA

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 14期

关键词：

Carbon; Aluminum Oxide; Chemical Vapor Deposition; X-ray Photoelectron Spectroscopy; Auger Electron Spectroscopy; Dimethylaluminum Isopropoxide; ATOMIC-LAYER-DEPOSITION; AL2O3; THIN-FILMS; DIMETHYLALUMINUM ISOPROPOXIDE; DIMETHYLISOPROPOXIDE; SILICON; DECOMPOSITION; TEMPERATURE; SURFACE; GROWTH; WATER;

D O I：

10.1016/j.tsf.2009.09.105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results from an investigation into the nature and extent of carbon incorporation into aluminum oxide thin films deposited from the pyrolysis of dimethylaluminum isopropoxide via high-vacuum chemical vapor deposition. The chemical nature and distribution of carbon in films deposited in the 417-659 degrees C temperature range were investigated through X-ray photoelectron spectroscopy and Auger electron spectroscopy. Carbon composition increased with increasing deposition temperature, up to approximately 8 at.% at 659 degrees C. Carbon in films deposited at 477 degrees C was bonded only to oxygen or carbon, but films deposited above 538 degrees C also contained metal carbide-like bonding. Carbon content in films deposited on hydrogen-terminated Si (100) substrates increased toward the film-substrate interface, but no silicon-carbon bonding was observed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3658 / 3663

页数：6

共 25 条

[1] Inelastic electron interactions in the energy range 50 eV to 10 keV in insulators: Alkali halides and metal oxides
Akkerman, A
Boutboul, T
Breskin, A
Chechik, R
Gibrekhterman, A
Lifshitz, Y
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 198 (02): : 769 - 784
[2] [Anonymous], 1999, HDB CHEM VAPOR DEPOS
[3] Al2O3 thin films from aluminium dimethylisopropoxide by metal-organic chemical vapour deposition
Barreca, D
Battiston, GA
Gerbasi, R
Tondello, E
[J]. JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (09) : 2127 - 2130
[4] Al2O3 growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gases
Barreca, D
Battiston, GA
Carta, G
Gerbasi, R
Rossetto, G
Tondello, E
Zanella, P
[J]. JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 539 - 546
[5] Battiston GA, 2002, CHEM VAPOR DEPOS, V8, P193, DOI 10.1002/1521-3862(20020903)8:5<193::AID-CVDE193>3.0.CO
[6] 2-H
[7] *CASAXPS, 2008, CASAXPS VERS 2 3 14
[8] Childs KD., 1995, HDB AUGER ELECT SPEC, V3
[9] Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water
Cho, W
Sung, K
An, KS
Lee, SS
Chung, TM
Kim, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1366 - 1370
[10] Adsorption reactions of dimethylaluminum isopropoxide and water on the H/Si(100)-2 x 1 surface:: Initial reactions for atomic layer deposition of Al2O3
Ghosh, Manik Kumer
Choi, Cheol Ho
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (23) : 11277 - 11283

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