Measurement of the density and the thermal expansion coefficient of molten silicon using electromagnetic levitation

The density and the thermal expansion coefficient of molten silicon with various dopants (Sb, B and Ga) were measured in the wide temperature range from 1100 to 1730 degrees C including undercooled region of 300 K using an electromagnetic levitation. The density and the thermal expansion coefficient of molten silicon were independent of dopant species. The recommended values for the density and the thermal expansion coefficient at the melting temperature are 2.52 g/cm(3) and 1.4 x 10(-4)/K. Anomalous behavior of density such as reported by the Kimura Meta Melt Project [S. Kimura, K. Terashima, J. Crystal Growth 180 (1997) 323] was not observed. (C) 1998 Elsevier Science B.V. All rights reserved.