In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

被引：103

作者：

Gao, Peng ^{[1
]}

Wang, Zhenzhong ^{[1
]}

Fu, Wangyang ^{[1
]}

Liao, Zhaoliang ^{[1
]}

Liu, Kaihui ^{[1
]}

Wang, Wenlong ^{[1
]}

Bai, Xuedong ^{[1
]}

Wang, Enge ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

MICRON | 2010年 / 41卷 / 04期

关键词：

In situ TEM; Microscopic mechanism; Oxygen vacancy migration; Resistance change effect; CeO2; CEO2;

D O I：

10.1016/j.micron.2009.11.010

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance switching effect in cerium oxides. The structure change during oxygen vacancy migration in CeO2 induced by electric field was in situ imaged inside high-resolution transmission electron microscope, which gives a direct evidence for oxygen migration mechanism for the microscopic origin of resistance change effect in CeO2. Our results have implications for understanding the nature of resistance change in metal oxides with mixed valence cations, such as fluorite, rutile and perovskite oxides. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：301 / 305

页数：5

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