A 100W class-e GaNHEMT with 75% drain efficiency at 2GHz

被引：23

作者：

Ui, Norihiko ^{[1
]}

Sano, Seigo ^{[1
]}

机构：

[1] Eudyna Devices Inc, 1000 Kamisukiawara, Yamanashi 4093883, Japan

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

Class-E operation; GaN RENIT; microwave frequency; harmonics;

D O I：

10.1109/EMICC.2006.282753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100W Class-E GaN HEMT device has been developed for high power and high efficiency amplifier. We achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of l2dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple CIass-E circuit topology.

引用

页码：72 / +

页数：2

共 6 条

[1] AKKUL M, 2004, IEEE INT MICR S, P843
[2] Joshin K, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P983
[3] 150 WGaN-on-Si RF power transistor
Nagy, W
Singhal, S
Borges, R
Johnson, JW
Brown, JD
Therrien, R
Chaudhari, A
Hanson, AW
Riddle, J
Booth, S
Rajagopal, P
Piner, EL
Linthicum, KJ
[J]. 2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 483 - 486
[4] NIKAIDO J, 2005, CS MANTECH DIGEST, P151
[5] STEVE CC, 1999, RF POWER AMPLIFIERS
[6] WANG F, 2004, IEEE TOP WORKSH POW

← 1 →