Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy

被引：2
|
作者：
Koh, KW [1 ]
Cho, MW
Zhu, Z
Hanada, T
Yoo, KH
Isshiki, M
Yao, T
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan
[2] Tohoku Univ, Inst Adv Mat Proc, Sendai, Miyagi 980, Japan
[3] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 04期
关键词：
ZnSe; nonpolar; GaAs(1 1 0); MBE; facet; facet-free;
D O I：
10.1016/S0022-0248(97)00831-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Single crystal films of ZnSe have been grown on nonpolar GaAs(110) surfaces by molecular beam epitaxy (MBE). The epitaxial films have been characterized by in situ reflection high-energy electron diffraction (RHEED), ex situ scanning electron microscopy (SEM) and X-ray diffraction. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [001] direction. The formation of facets indicates that ZnSe growth on the (110) surface proceeds 6 degrees-13 degrees off the vicinal (110) surface. Facet-free ZnSe surface has been successfully grown on a GaAs(110) 6 degrees-off the substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：528 / 534
页数：7
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