High-Efficiency Graphene-Oxide/Silicon Solar Cells with an Organic-Passivated Interface

被引:10
|
作者
Gao, Qing [1 ]
Yan, Jun [1 ]
Wan, Lu [1 ]
Zhang, Cuili [1 ]
Wen, Zhixi [1 ]
Zhou, Xin
Li, Han [2 ]
Li, Feng [3 ]
Chen, Jingwei [1 ]
Guo, Jianxin [1 ]
Song, Dengyuan [1 ]
Flavel, Benjamin S. [2 ]
Chen, Jianhui [1 ]
机构
[1] Hebei Univ, Hebei Key Lab Opt Elect Informat & Mat, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76344 Eggenstein Leopoldshafen, Germany
[3] Yingli Green Energy Holding Co Ltd, State Key Lab Photovolta Mat & Technol, Baoding 071051, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; organic passivation; photovoltaic; reduced graphene oxide; silicon solar cells; METAL-OXIDES; HETEROSTRUCTURE; ELECTRODES; CONTACTS;
D O I
10.1002/admi.202201221
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A breakthrough in graphene-oxide/silicon heterojunction solar cells is presented in which edge-oxidized graphene and an in-plane charge transfer dopant (Nafion) are combined to form a high-quality passivating contact scheme. A graphene oxide (GO):Nafion ink is developed and an advanced back-junction GO:Nafion/n-Si solar cell with a high-power conversion efficiency (18.8%) and large area (5.5 cm(2)) is reported. This scalable solution-based processing technique has the potential to enable low-cost carbon/silicon heterojunction photovoltaic devices.
引用
收藏
页数:7
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