Identification of defect levels in CdTe/CdS solar cells using deep level transient spectroscopy

被引：12

作者：

Komin, V ^{[1
]}

Viswanathan, V ^{[1
]}

Tetali, B ^{[1
]}

Morel, DL ^{[1
]}

Ferekides, CS ^{[1
]}

机构：

[1] Univ S Florida, Dept Elect Engn, Ctr Clean Energy & Vehicles, Tampa, FL 33620 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190670

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Defect levels in CdTe/CdS have been characterized using correlation deep level transient spectroscopy. The devices studied were processed under various conditions in an effort to identify defect levels and correlate their presence to key processes and impurities. Process variations included the CdCl2 treatment, as this process is very common to most CdTe technologies, and the back contact. The back contact often relies on the use of copper, an impurity known to be critical for the formation of effective back contacts, but which, has also been associated with device degradation in CdTe solar cells. Several hole and electron traps were identified and are presented in this paper.

引用

页码：736 / 739

页数：4

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