Novel test structures for stress diagnosis in micromechanics

被引:8
作者
Bagolini, A [1 ]
Margesin, B [1 ]
Faes, A [1 ]
Turco, G [1 ]
Giacomozzi, F [1 ]
机构
[1] IRST, ITC, I-38050 Trento, TN, Italy
关键词
stress; test structures; surface micromachining;
D O I
10.1016/j.sna.2004.03.050
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel set of microstructures for on-wafer stress measurement is presented, based on a lancet principle, with dedicated design for the amplification of the dimensional variations induced by the internal stress of the structural material. A tilted arm geometry was adopted in order to maximize the strain induced movement, keeping the design relatively simple and robust and the lancet on the wafer plane. A set of simulations, as well as an analytical examination of the structure was performed to establish the optimal geometry: different tilt angles were simulated in a range between -200 and 200 MPa internal stress. Test structures were then realized by means of surface micromachining, adopting photoresist as sacrificial layer and electroplated gold as structural layer: the novel geometry was sided by traditional rotating structures [Sens. Actuators A 37/38 (1993) 756] and wafer curvature measurements to confirm the readout. Plastic regime simulations were adopted to analyze the behavior of the gold structures, based on a stress-strain curve obtained experimentally. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:494 / 500
页数:7
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