Characteristics of CuCr1-xMgxO2 films prepared by pulsed laser deposition

被引：35

作者：

Li, Da ^{[1
]}

Fang, Xiaodong ^{[1
]}

Deng, Zanhong ^{[1
]}

Dong, Weiwei ^{[1
]}

Ta, Ruhua ^{[1
]}

Zhou, Shu ^{[1
]}

Wang, Jinmei ^{[1
]}

Wang, Tao ^{[1
]}

Zha, Yiping ^{[1
]}

Zhu, Xuebin ^{[2
]}

机构：

[1] Chinese Acad Sci, Key Lab New Thin Films Solar Cells, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Key Lab New Thin Films Solar Cells, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 486卷 / 1-2期

关键词：

Thin films; Laser processing; Electrical transport; Optical properties; TRANSPARENT THIN-FILMS; P-N-JUNCTIONS; ELECTRICAL-CONDUCTION; OXIDE; DELAFOSSITE; FABRICATION; GROWTH; TEMPERATURE; OXYGEN;

D O I：

10.1016/j.jallcom.2009.06.174

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-quality c-axis oriented CuCr1-xMgxO2 (0 <= x <= 0.05) thin films were prepared by pulsed laser deposition (PLD) technique. The Mg-doped CuCrO2 films can be obtained at lower substrate temperature compared to the pure CuCrO2 film. The growing rates of CuCr1-xMgxO2 films deposited with different pulse energy densities are different; the different pulse energy densities result in different grain sizes on the surface of these CuCr1-xMgxO2 films. The CuCr1-xMgxO2 films with high transmittance for certain wavelength can be obtained by controlling the thicknesses of CuCr1-xMgxO2 films. The maximal transmittance of CuCr1-xMgxO2 films can reach 75% in the visible region. Optical transmission data of CuCr1-xMgxO2 films indicate a direct band gap of 3.2 eV. All the films behave as semiconductors. Upon doping with 5% Mg, the resistivity of CuCrO2 films decreases from 67 to 0.025 Omega cm. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：462 / 467

页数：6

共 37 条

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