Growth of two-dimensional GaN in Na-4 mica nanochannels

被引：16

作者：

Bhattacharya, Santanu ^{[1
]}

Datta, Anindya ^{[1
]}

Dhara, Sandip ^{[2
]}

Chakravorty, Dipankar ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, DST Unit Nanosci, Kolkata 700032, India

[2] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 23期

关键词：

GALLIUM NITRIDE; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE;

D O I：

10.1088/0022-3727/42/23/235504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional GaN films and ribbons have been synthesized within Na-4 mica nanochannels. The thickness of the films is 0.6 nm as estimated from published x-ray diffraction data of Na-4 mica. Room temperature photoluminescence studies show a blue shift in bandgap which is ascribed to the quantum confinement effect. Unusually long excitonic lifetimes in these 2D systems appear to indicate low density of defects.

引用

页数：5

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