Study of Plasma Properties for the Low-Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

被引：33

作者：

Sahu, Bibhuti Bhusan ^{[1
]}

Han, Jeon Geon ^{[1
]}

Kim, Jay Bum ^{[1
]}

Kumar, Manish ^{[1
]}

Jin, Subong ^{[1
]}

Hori, Masaru ^{[2
]}

机构：

[1] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, NU SKKU Joint Inst Plasma Nano Mat, Suwon 440746, South Korea

[2] Nagoya Univ, Plasma Nanotechnol Res Ctr, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

PLASMA PROCESSES AND POLYMERS | 2016年 / 13卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

AZO film; DC/RF plasmas; ICP assisted magnetron sputtering; plasma diagnostics; OXIDE THIN-FILMS; ZINC-OXIDE; LANGMUIR PROBE; ELECTRICAL-PROPERTIES; TRANSPARENT; FREQUENCY; PRESSURE; PHYSICS;

D O I：

10.1002/ppap.201500094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports an investigation of the Al-doped ZnO (AZO) film deposition process using ICP assisted DC magnetron plasmas, at different working pressures. The mechanism of plasma formation and plasma properties are analyzed by various diagnostic tools. Data show that there is the presence of low-frequency oscillations in the range of 3-8 MHz, which are expected to be caused by high-frequency waves. It is seen that ICP source is quite capable of producing the high-energy warm electrons that are expected to be produced by the Landau damping. The plasma properties and their role on the electrical and structural properties of the AZO film are carefully studied. This work also reports the deposition of high conductive AZO films with resistivity as low as similar to 6.8 x 10(-4) cm using low-temperature process.

引用

页码：134 / 146

页数：13

共 78 条

[1] Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition [J].