Threshold switching effects in SBxSe1-x thin films

被引：7
作者：
Aly, EH [1 ]
Ibrahim, AM [1 ]
机构：
[1] Ain Shams Univ, Univ Coll Girls, Dept Phys, Cairo, Egypt
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 20期
关键词：
D O I：
10.1088/0022-3727/33/20/305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The switching effects in SbxSe1-x (0 less than or equal to x less than or equal to 0.9) thin films have been investigated. The annealing of the films at 323 K improves the switching characteristics and decreases the threshold voltage V-th The threshold switching voltage and threshold activation energy epsilon (s) were found to decrease linearly on increasing the antimony content. Moreover, the threshold switching voltage increased exponentially with temperature.
引用
收藏
页码：2549 / 2552
页数：4
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