Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

被引:109
作者
Sortino, L. [1 ]
Zotev, P. G. [1 ]
Mignuzzi, S. [2 ]
Cambiasso, J. [2 ]
Schmidt, D. [3 ]
Genco, A. [1 ]
Assmann, M. [3 ]
Bayer, M. [3 ]
Maier, S. A. [2 ,4 ]
Sapienza, R. [2 ]
Tartakovskii, A. I. [1 ]
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Imperial Coll London, Dept Phys, Blackett Lab, London SW7 2BW, England
[3] Tech Univ Dortmund, Expt Phys 2, D-44221 Dortmund, Germany
[4] Ludwig Maximilians Univ Munchen, Fac Phys, Nanoinst Munich, Chair Hybrid Nanosyst, D-80539 Munich, Germany
基金
欧盟地平线“2020”; 英国工程与自然科学研究理事会;
关键词
MONOLAYER MOS2; TRANSITION; EMISSION; NANOPHOTONICS; PHOTONICS; LASERS;
D O I
10.1038/s41467-019-12963-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities having the optical mode volume close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe2. We observe a photoluminescence enhancement exceeding 10(4) compared with WSe2 placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10(3). Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.
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页数:8
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