Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition

被引：22

作者：

Ibuki, S ^{[1
]}

Yanagi, H ^{[1
]}

Ueda, K ^{[1
]}

Kawazoe, H ^{[1
]}

Hosono, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 05期

关键词：

D O I：

10.1063/1.1287404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sn-doped AgInO2 thin films were prepared on alpha-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be similar to 4.1 eV, and electrical conductivity was 7.3x10(1) S cm(-1) at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3x10(20) cm(-3) and 1.4 cm(2) V(-1)s(-1), respectively. (C) 2000 American Institute of Physics. [S0021-8979(00)04217-1].

引用

页码：3067 / 3069

页数：3

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