CVD diamond growth from nanodiamond seeds buried under a thin chromium layer

被引：11

作者：

Degutis, G. ^{[1
]}

Pobedinskas, P. ^{[1
,2
]}

Turner, S. ^{[3
]}

Lu, Y. -G. ^{[3
,4
,5
]}

Al Riyami, S. ^{[1
,4
,5
,6
]}

Ruttens, B. ^{[2
]}

Yoshitake, T. ^{[4
,5
]}

D'Haen, J. ^{[2
]}

Haenen, K. ^{[1
,2
]}

Verbeeck, J. ^{[3
]}

Hardy, A. ^{[1
,2
]}

Van Bael, M. K. ^{[1
,2
]}

机构：

[1] Hasselt Univ, Inst Mat Res IMO, B-3500 Hasselt, Belgium

[2] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium

[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

[4] Univ N Carolina, Dept Mech Engn & Engn Sci, Charlotte, NC 28223 USA

[5] Kyushu Univ, 6-1 Kasuga, Fukuoka 8168580, Japan

[6] German Univ Technol Oman, Barka, Oman

来源：

关键词：

CVD diamond; Cr diffusion; Cr carburization; Si-Cr interface; MECHANICAL-PROPERTIES; NUCLEATION; DEPOSITION; SUBSTRATE; MICROWAVE; SILICIDE; KINETICS; FILMS;

D O I：

10.1016/j.diamond.2016.02.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents a morphological and structural analysis of CVD diamond growth on silicon from nanodiamond seeds covered by a 50 nm thick chromium layer. The role of carbon diffusion as well as chromium and carbon silicide formation is analyzed. The local diamond environment is investigated by scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. The evolution of the diamond phase composition (sp(3)/sp(2)) is evaluated by micro-Raman spectroscopy. Raman and X-ray diffraction analysis are used to identify the interfacial phases formed during CVD growth. Based upon the observed morphological and structural evolution, a diamond growth model from nanodiamond seeds buried beneath a thin Cr layer is proposed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：163 / 168

页数：6

共 30 条

[1] Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing [J].