An inductor-based 52-GHz 0.18μm SiGe HBT cascode LNA with 22 dB gain

被引：16

作者：

Gordon, M ^{[1
]}

Voinigescu, SP ^{[1
]}

机构：

[1] Univ Toronto, Toronto, ON, Canada

来源：

ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSCIR.2004.1356674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 52-GHz two-stage cascode LNA implemented in a production 0.18 mum SiGe BiCMOS process is presented. By using inductors rather than transmission lines for matching, it occupies an area of only 200 mum x 250 mum. The circuit features standard 60 pm x 60 pm bond pads, on-chip bias network, and consumes 11.4 mA from a 3.3 V supply. The measured S-11 is lower than -12 dB from 35 GHz to 65 GHz and S-21 exceeds 22 dB. The gain remains above 18 dB when the supply voltage and power dissipation are reduced to 2.5 V and 19.5 in W respectively.

引用

页码：287 / 290

页数：4

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