Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

被引：0

作者：

Horio, K ^{[1
]}

Wakabayashi, A ^{[1
]}

机构：

[1] Shibaura Inst Technol, Fac Syst Engn, Omiya, Saitama 3308570, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 12期

关键词：

GaAs MESFET; kink; impact ionization; surface state; trap; 2-D simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

引用

页码：2270 / 2276

页数：7

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