Carrier transport analysis on the modulation speed of light-emitting transistors

被引：0
|
作者：
Yang, Hao-Hsiang [1 ]
Wang, Hsiao-Lun [1 ]
Wu, Chao-Hsin [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
2014 OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE AND AUSTRALIAN CONFERENCE ON OPTICAL FIBRE TECHNOLOGY (OECC/ACOFT 2014) | 2014年
关键词：
QUANTUM-WELL LASERS; ESCAPE PROCESSES; CAPTURE; BANDWIDTH; EMISSION; TIMES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Through microwave measurement followed by small-signal model analysis, we observe that the base transit time, tau(t) of the LET is reduced evidently from 90 ps to 20 ps when the collector current density increases from 2.43 kA/cm(2) to 34.9 kA/cm(2)
引用
收藏
页码：633 / 635
页数：3
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