Enhanced dielectric characteristics of preferential (111)-oriented BZT thin films by manganese doping

被引：54

作者：

Jie, W. J.

Zhu, J. ^{[1
]}

Qin, W. F.

Wei, X. H.

Xiong, J.

Zhang, Y.

Bhalla, A.

Li, Y. R.

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 09期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

D O I：

10.1088/0022-3727/40/9/028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba(Zr0.2Ti0.8) O-3 (BZT) and 2 mol% Mn additional doped BZT ( Mn - BZT) thin films were deposited on Pt/Ti/SiO2/Si by the pulsed laser deposition (PLD) technique under the same growth conditions. X-ray diffraction scans showed that both films were polycrystalline and preferentially ( 1 1 1)-oriented, and an enhanced crystallization effect was obtained after Mn doping. The parallel-plate capacitors of Au/BZT/Pt and Au/Mn-BZT/Pt were prepared to investigate the electric properties, respectively. The remanent polarization and the coercive electric field for Mn-doped BZT film were both smaller than those of undoped BZT film. Furthermore, Mn-doped BZT film exhibited a higher dielectric constant of 460 at zero bias, larger dielectric tunability of 69.0% and lower dielectric loss of 5.0% under an applied electric field of 615 kV cm(-1) than those of undoped BZT film. The figure of merit for preferentially ( 1 1 1)-oriented BZT thin film was greatly enhanced from 94 to 138 by Mn doping. The enhanced dielectric behaviour by Mn doping could be mainly attributed to the decrease in electron concentration and oxygen vacancies and the reorientation of the defect complex.

引用

页码：2854 / 2857

页数：4

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