Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

被引：9

作者：

Ulloa, J. M. ^{[1
]}

Koenraad, P. M. ^{[1
]}

Bonnet-Eymard, M. ^{[2
]}

Letoublon, A. ^{[2
]}

Bertru, N. ^{[2
]}

机构：

[1] Eindhoven Univ Technol, COBRA Inter Univ Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] INSA Rennes, LENS, F-3543 Rennes, France

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 07期

关键词：

GROWTH; SHAPE;

D O I：

10.1063/1.3361036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots (QDs) grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In0.53Ga0.47As-capped QDs are clearly truncated pyramids, GaAs0.51Sb0.49-capped QDs grown under the same conditions look like full pyramids and exhibit a larger height, indicating that capping with GaAsSb reduces dot decomposition. Since there are no differences in strain between the two capping layers, this behavior is most likely related to the surfactant effect of Sb, which stabilizes the growth front and avoids adatom migration. (C) 2010 American Institute of Physics. [doi:10.1063/1.3361036]

引用

页数：4

共 22 条

[1] Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates [J].

Akahane, K ;

Yamamoto, N ;

Ohtani, N .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :295-299

[2] Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy [J].

Bruls, DM ;

Vugs, JWAM ;

Koenraad, PM ;

Salemink, HWM ;

Wolter, JH ;

Hopkinson, M ;

Skolnick, MS ;

Long, F ;

Gill, SPA .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1708-1710

[3] Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy [J].

Celebi, C. ;

Ulloa, J. M. ;

Koenraad, P. M. ;

Simon, A. ;

Letoublon, A. ;

Bertru, N. .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[4] InAsSb/InP quantum dots for midwave infrared emitters:: A theoretical study -: art. no. 126105 [J].

Cornet, C ;

Doré, F ;

Ballestar, A ;

Even, J ;

Bertru, N ;

Le Corre, A ;

Loualiche, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)

[5] Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions [J].

Feenstra, RM .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :796-802

[6] 1.55 μm emission from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation [J].

Guimard, Denis ;

Tsukamoto, Shiro ;

Nishioka, Masao ;

Arakawa, Yasuhiko .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[7] Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics [J].

Guimard, Denis ;

Ishida, Mitsuru ;

Li, Lin ;

Nishioka, Masao ;

Tanaka, Yu ;

Sudo, Hisao ;

Yamamoto, Tsuyoshi ;

Kondo, Hayato ;

Sugawara, Mitsuru ;

Arakawa, Yasuhiko .

APPLIED PHYSICS LETTERS, 2009, 94 (10)

[8] Formation of columnar (In,Ga)As quantum dots on GaAs(100) [J].

He, J ;

Nötzel, R ;

Offermans, P ;

Koenraad, PM ;

Gong, Q ;

Hamhuis, GJ ;

Eijkemans, TJ ;

Wolter, JH .

APPLIED PHYSICS LETTERS, 2004, 85 (14) :2771-2773

[9]

JAND YD, 2008, APPL PHYS LETT, V92, P45402

[10] Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots [J].

Joyce, PB ;

Krzyzewski, TJ ;

Steans, PH ;

Bell, GR ;

Neave, JH ;

Jones, TS .

SURFACE SCIENCE, 2001, 492 (03) :345-353

← 1 2 3 →