High-power, high-efficient 1150nm quantum well laser

被引：2

作者：

Erbert, G ^{[1
]}

Bugge, F ^{[1
]}

Fricke, J ^{[1
]}

Ressel, P ^{[1
]}

Staske, R ^{[1
]}

Sumpf, B ^{[1
]}

Wenzel, H ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztechn, D-12489 Berlin, Germany

来源：

2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年

关键词：

D O I：

10.1109/ISLC.2004.1382745

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs waveguide layers. A low divergence of 20degrees FWHM and reliable 5W output power from a 60mum stripe laser was achieved.

引用

页码：41 / 42

页数：2

共 4 条

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