Molecular electrodes at the exposed edge of metal/insulator/metal trilayer structures

被引:54
作者
Tyagi, Pawan
Li, Dongfeng
Holmes, Stephen M.
Hinds, Bruce J. [1 ]
机构
[1] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
[2] Univ Kentucky, Ctr Nanoscale Sci & Engn, Dept Chem & Mat Engn, Lexington, KY 40506 USA
[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
基金
美国国家科学基金会;
关键词
D O I
10.1021/ja065789d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Producing reliable electrical contacts of molecular dimensions has been a critical challenge in the field of molecule-based electronics. Conventional thin film deposition and photolithography techniques have been utilized to construct novel nanometer-sized electrodes on the exposed vertical plane on the edge of a thin film multilayer structure (metal/insulator/metal). Via thiol surface attachment to metal leads, an array of paramagnetic, cyanide-bridged octametal complexes, [(pzTp)Fe-III(CN)(3)](4)[Ni-II(L)](4)[O3SCF3](4) (1) [(pzTp) = tetra(pyrazol-1-yl)borate; L = 1-S(acetyl)tris(pyrazolyl)decane], were covalently linked onto the electrodes forming a dominant conduction pathway. A series of molecule-based devices were fabricated using Ni, NiFe, Ta, and Au as metal electrodes separated by insulating Al2O3 spacers, followed by treatment with 1. A series of control experiments were also performed to demonstrate that the conduction path was through tethered metal clusters. The molecular current was analyzed via the Simmons tunnel model, and calculations are consistent with electron tunneling through the alkane ethers to the central metal core. With a Ni/Al2O3/Au molecular electrode, the tether binding was found to be reversible to the top Au layer, allowing for a new class of chemical detection based on the steric bulk of coordinating analytes to disconnect the molecular current path. Simple and economical photolithography/liftoff/self-assembly fabrication techniques afford robust molecular junctions with high reproducibility (> 90%) and long operational lifetimes (> 1 year).
引用
收藏
页码:4929 / 4938
页数:10
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