High-performance optical modulator with a wide center electrode and thin x-cut LiNbO3 substrate

被引：13

作者：

Aoki, K ^{[1
]}

Kondo, J

Kondo, A

Mori, T

Mizuno, Y

Shimodaira, S

Imaeda, M

Kozuka, Y

Mitomi, O

Minakata, M

机构：

[1] NGK Insulators, Nagoya, Aichi 4678530, Japan

[2] Shizuoka Univ, Elect Res Inst, Shizuoka 4328011, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 12期

关键词：

colplanar waveguides; electrooptical modulation; finite element methods; optical modulation; traveling-wave devices;

D O I：

10.1109/LPT.2004.836358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose an excellent large-bandwidth back-slot lithium niobate (LN) modulator with a wide center electrode of typically 50 mum or wider and relatively thin electrodes. From the calculation, a modulator with a 3-dBe bandwidth of 34 GHz and a half-wave voltage of 2.0 V for a 50Omega characteristic impedance system was realized theoretically. This means when their half-wave voltages are identical, by applying a wider electrode, the modulator bandwidth becomes 2.6 times larger than that of a conventional one. We also confirmed experimentally that the wide center electrode structure is effective for back-slot LN modulators.

引用

页码：2610 / 2612

页数：3