Analysis of a bi-piezoelectric ceramic layer with an interfacial crack subjected to anti-plane shear and in-plane electric loading

被引:5
|
作者
Soh, AK [1 ]
Fang, DN
Lee, KL
机构
[1] Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
[2] Tsing Hua Univ, Dept Engn Mech, Beijing 100084, Peoples R China
关键词
bi-piezoelectric ceramic; interfacial crack; Fourier integral transform; energy release rate; stress intensity factors; electrical displacement intensity factor;
D O I
暂无
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
The behaviour of a bi-piezoelectric ceramic layer with a centre interfacial crack subjected to anti-plane shear and in-plane electric loading has been studied. The dislocation density Functions and the Fourier integral transform method have been employed to eliminate the problem of singular integral equations. The normalized energy release rare, stress and electrical displacement intensity factors, G/C-0, K-III/K-III0 and K-D/K-D0 respectively, were determined For different geometric and property parameters by use of two different crack surface electric boundary conditions, i.e. impermeable and permeable, it has been shown that the effects of the thickness and material constants of the piezoelectric layer on all the three parameters, i.e. C/G(0), K-III/K-III0 and K-D/K-D0 were significant. (C) 2000 Editions scientifiques et medicales Elsevier SAS.
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页码:961 / 977
页数:17
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